| ‘lllvVISHAYQ I B230LA, B240A7 Www'V'Shay'C°m Vishay General Semiconductor 100 i U00 j:——j: 0.01 10Percent of Rated Peak Reverse Voltage (%) :1 01 instantaneous Forward Current (A) Junction Capacitance (pF) é 0 01 0.2 0.3 04 0.5 0.6 0.7 00 0.9 1.0 1 10 100 Instantaneous FonNard Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous FcnNard Characteristics Fig. 5 - Typical Junction Capacitance 100 D S: 0.01 instantaneous Reverse Current (mA) 0 001 Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENsIoNs In Inches (miiiimeters) Do—214Ac (sMA) Cathode Band Mounting Pad Layout7 T 0 use (1 65) , ‘_0.U;A’4/R()1(8E) MIN. 0.065 (1.95) 0110(2.79) l l 0 mg (1.25) 0.100 (2.54) i 0 177 (4.50) f 4‘4444 EETEEET 4444*’ > ‘ 0 012 (0.305) “'06” (‘ 52] 4? 47 + + MIN0 208 (5.28) <r/ ?is REF 0 073 (I 95) , L, +0.030 (0 76] 0 008 (0.203) 0 (0) 0.200 (5.20) 0.I94 (A 93) Revision: 26-Mar-12 3 Document Number: 88894 For technical questions within your region: Diode§Americas@vishay.c0m, DiodesAsia@vishay.com, DigdesEurope@vishay.com THIS DOCUMENT Is SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.cgm/d9c?910!!0 |